A one-dimensional model for the growth of CdTe quantum dots on Si substrates
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Abstract: Recent experiments involving CdTe films grown on Si(111) substrates by hot wall epitaxy revealed features not previously observed [S. O. Ferreira extit{et al.}, J. Appl. Phys. extbf{93}, 1195 (2003)]. This system, which follows the Volmer-Weber growth mode with nucleation of isolated 3D islands for less than one monolayer of evaporated material, was described by a peculiar behavior of the quantum dot (QD) size distributions. In this work, we proposed a kinetic deposition model to reproduce these new features. The model, which includes thermally activated diffusion and evaporation of CdTe, qualitatively reproduced the experimental QD size distributions. Moreover, the model predicts a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher ones characterized through the QD width distributions.
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Cites work
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(5)- Monte Carlo simulation of the kinetics in the growth of semiconductor quantum dots
- Size distribution in quantum-dot heterostructures
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- Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
- Modeling (001) surfaces of II-VI semiconductors
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