Monte Carlo simulation of the kinetics in the growth of semiconductor quantum dots

DOI10.1142/S0217984911025869MaRDI QIDQ5392963zbMATH OpenOpenAlexFDO

Authors

Publication date 15 April 2011

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984911025869

zbMATH Keywords

kinetics effectmolecular beam epitaxyquantum dot

Mathematics Subject Classification ID

Quantum dots as quasi particles (81V65) Statistical mechanics of semiconductors (82D37)

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Cited in

(9)

• Monte-Carlo modeling of electron kinetics in room temperature quantum-dot photodetectors
• Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth
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• MULTILEVEL BLOCKING MONTE CARLO SIMULATIONS FOR QUANTUM DOTS
• Monte Carlo simulations for a kinetic growth model
• Kinetic Monte Carlo simulation of metallic nanoislands grown by physical vapor deposition
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• A one-dimensional model for the growth of CdTe quantum dots on Si substrates
• Epitaxial and endotaxial semiconductor quantum dots: a brief review on atomic ordering and the void-mediated formation mechanism

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