Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing
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Publication:2267919
Abstract: An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this model nevertheless captures many aspects of heteroepitaxial growth, including nucleation, surface diffusion, and long range effects due elastic interaction. The algorithm combines a fast evaluation of the elastic displacement field with an efficient implementation of a rejection-reduced kinetic Monte Carlo based on using upper bounds for the rates. The former is achieved by using a multigrid method for global updates of the displacement field and an expanding box method for local updates. The simulations show the importance of intermixing on the growth of a strained film. Further the method is used to simulate the growth of self-assembled stacked quantum dots.
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Cited in
(17)- Coupling kinetic Monte-Carlo and continuum models with application to epitaxial growth
- Analysis of an energy localization approximation applied to three-dimensional kinetic Monte Carlo simulations of heteroepitaxial growth
- Energy stable multigrid method for local and non-local hydrodynamic models for freezing
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- Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
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- Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth
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- Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth
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- Fast kinetic Monte Carlo simulations using hash table based caching with applications to nanowire growth and sintering
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