Fast kinetic Monte Carlo simulation of strained heteroepitaxy in three dimensions

DOI10.1007/s10915-008-9205-9zbMath1203.82055arXiv0802.4133OpenAlexW2047933923MaRDI QIDQ618405

Chi-Hang Lam, M. T. Lung, Leonard M. Sander

Publication date: 16 January 2011

Published in: Journal of Scientific Computing (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/0802.4133

zbMATH Keywords

Monte Carlo simulationsurfacesthin filmsheteroepitaxy

Mathematics Subject Classification ID

Monte Carlo methods (65C05)

Related Items (1)

An energy localization principle and its application to fast kinetic Monte Carlo simulation of heteroepitaxial growth

Uses Software

• SERBA

Cites Work

• The stress driven instability in elastic crystals: Mathematical models and physical manifestations
• Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
• Thin Film Materials

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