Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOI10.1016/J.JCP.2010.02.008MaRDI QIDQ975120zbMATH OpenOpenAlexFDO

Authors Haiyan Jiang, Wei Cai

Publication date 8 June 2010

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jcp.2010.02.008

zbMATH Keywords

DG-MOSFETnon-equilibrium Green's functionWigner function

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Statistical mechanics of nanostructures and nanoparticles (82D80)

Recommendations

• Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
• Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
• A new approach for numerical simulation of quantum transport in double‐gate SOI
• Quantum transport in nano MOSFETs
• Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes

Cites work

• A Spectral Collocation Technique for the Solution of the Wigner–Poisson Problem
• Adaptive conservative cell average spectral element methods for transient Wigner equation in quantum transport
• Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
• Electron dynamics inside short-coherence systems
• Solid state physics.
• Subband decomposition approach for the simulation of quantum electron transport in nanostructures

Cited in

(10)

• A new approach to numerical simulation of charge transport in double gate-MOSFET
• A hybrid sinc-Galerkin/finite-difference method for the time-dependent Wigner equation
• Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
• A device adaptive inflow boundary condition for Wigner equations of quantum transport
• Multiband treatment of quantum transport in anisotropic semiconductors: non-equilibrium Green's function
• On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor
• A new approach for numerical simulation of quantum transport in double‐gate SOI
• Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes
• Chebyshev spectral method for solving the Schrödinger equation under transmission boundary conditions
• Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs

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