Exploring voltage-dependent ion channels in silico by hysteretic conductance
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Publication:985246
DOI10.1016/J.MBS.2010.03.004zbMATH Open1193.92032OpenAlexW2062982444WikidataQ44511684 ScholiaQ44511684MaRDI QIDQ985246FDOQ985246
Authors: Tom Andersson 
Publication date: 20 July 2010
Published in: Mathematical Biosciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.mbs.2010.03.004
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Cites Work
- Ion channel kinetics: A model based on fractal scaling rather than multistate Markov processes
- Robust inference and modelling for the single ion channel
- Statistical properties of ion channel records. I: Relationship to the macroscopic current
- Statistical properties of ion channel records. II: Estimation from the macroscopic current
Cited In (7)
- Simulations of space-clamp errors in estimating parameters of voltage-gated conductances localized at different electrotonic distances
- Computing transient gating charge movement of voltage-dependent ion channels
- Computational study on hysteresis of ion channels: multiple solutions to steady-state Poisson-Nernst-Planck equations
- Nonequilibrium response of a voltage gated sodium ion channel and biophysical characterization of dynamic hysteresis
- Relaxation phenomena in the (in)activation gates of the voltage-gated ion channels
- A comparative tool for the validity of rate kinetics in ion channels by Onsager reciprocity theorem
- On hysteresis of ion channels
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