Exploring voltage-dependent ion channels in silico by hysteretic conductance

DOI10.1016/J.MBS.2010.03.004zbMATH Open1193.92032OpenAlexW2062982444WikidataQ44511684 ScholiaQ44511684MaRDI QIDQ985246FDOQ985246

Tom Andersson

Publication date: 20 July 2010

Published in: Mathematical Biosciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mbs.2010.03.004

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zbMATH Keywords

hysteretic conductancekinetic Markov modelsvoltage-dependent ion channels

Mathematics Subject Classification ID

Special processes (60K99) Biophysics (92C05) Cell biology (92C37)

Cites Work

• Ion channel kinetics: A model based on fractal scaling rather than multistate Markov processes
• Robust inference and modelling for the single ion channel
• Statistical properties of ion channel records. I: Relationship to the macroscopic current
• Statistical properties of ion channel records. II: Estimation from the macroscopic current

Cited In (3)

• Simulations of space-clamp errors in estimating parameters of voltage-gated conductances localized at different electrotonic distances
• Computing transient gating charge movement of voltage-dependent ion channels
• Computational Study on Hysteresis of Ion Channels: Multiple Solutions to Steady-State Poisson-Nernst-Planck Equations

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