Compatible domain arrangements and poling ability in oriented ferroelectric films

DOI10.1007/S00161-010-0136-YzbMATH Open1273.74185OpenAlexW2057955773MaRDI QIDQ989991FDOQ989991

Authors: N. T. Tsou, J. E. Huber 

Publication date: 23 August 2010

Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s00161-010-0136-y

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zbMATH Keywords

laminatethin filmferroelectricdomain structurepoling path

Mathematics Subject Classification ID

Electromagnetic effects in solid mechanics (74F15) Thin films (74K35) Statistical mechanics of ferroelectrics (82D45)

Cites Work

• Fine phase mixtures as minimizers of energy
• Energy minimizers for large ferromagnetic bodies
• A constrained theory of magnetoelasticity
• On ferroelectric crystals with engineered domain configurations
• A theory of thin films of martensitic materials with applications to microactuators
• The effective energy and laminated microstructures in martensitic phase transformations

Cited In (4)

• Continuum theory and phase-field simulation of magnetoelectric effects in multiferroic bismuth ferrite
• Position-thickness-dependent stresses and stress-induced diffuse dielectric anomaly in perovskite ferroelectric films
• Effects of thickness on the polarization states in epitaxial ferroelectric thin films
• Minimum size of 180 degree domains in ferroelectric thin films covered by electrodes

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