Solid-on-solid interfaces with disordered pinning

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Abstract: We investigate the localization transition for a simple model of interface which interacts with an inhomonegeous defect plane. The interface is modeled by the graph of a function phi:mathbbZ2omathbbZ,and the disorder is given by a fixed realization of a field of IID centered random variables(omegax)xinmathbbZ2. The Hamiltonian of the system depends on three parameters and hinmathbbR which determine respectively the intensity of nearest neighbor interaction the amplitude of disorder and the mean value of the interaction with the substrate, and is given by the expression mathcal H(phi):= �etasum_{xsim y} |phi(x)-phi(y)|- sum_{x} (alphaomega_x+h){�f 1}_{{phi(x)=0}}. We focus on the large-/rigid phase phase of the Solid-On-Solid (SOS) model. In that regime, we provide a sharp description of the phase transition in h from a localized phase to a delocalized one corresponding respectivelly to a positive and vanishing fraction of points with phi(x)=0. We prove that the critical value for h corresponds to that of the annealed model and is given by hc(alpha)=logmathbbE[ealphaomega], and that near the critical point, the free energy displays the following critical behavior F_�eta(alpha,h_c+u )stackrel{u o 0+}{sim} max_{nge 1} left{ heta_1 e^{-4�eta n} u- frac{1}{2} heta^2_1 e^{-8�eta n} frac{mathrm{Var}left[e^{alpha omega} ight]}{mathbb E left[ e^{alpha omega} ight]^2} ight}. The positive constant is defined by the asymptotic probability of spikes for the infinite volume SOS with 0 boundary condition ...



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