Pages that link to "Item:Q3035598"
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The following pages link to A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes (Q3035598):
Displaying 8 items.
- Numerical simulation of semiconductor devices (Q912746) (← links)
- Adaptive finite element approximation for steady-state Poisson-Nernst-Planck equations (Q2165014) (← links)
- A virtual element method for the steady-state Poisson-Nernst-Planck equations on polygonal meshes (Q2239104) (← links)
- A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations (Q4030871) (← links)
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case (Q4031570) (← links)
- Quasi‐variational inequality and shape optimization for solution of a free boundary problem (Q4255088) (← links)
- Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions (Q4346021) (← links)
- ON A NEW SCALING FOR SEMICONDUCTOR DEVICE EQUATIONS AND ITS ASYMPTOTIC ANALYSIS (Q4798918) (← links)