Pages that link to "Item:Q3805101"
From MaRDI portal
The following pages link to An Asymptotic Analysis of a Transient <i>p</i>-<i>n</i>-Junction Model (Q3805101):
Displaying 10 items.
- The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions (Q936580) (← links)
- Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation (Q1006100) (← links)
- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors (Q1604238) (← links)
- Initial transients of solutions of the semiconductor device equations (Q1813632) (← links)
- Initial time layer problem for quantum drift-diffusion model (Q2427246) (← links)
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices (Q2496733) (← links)
- QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS (Q3056449) (← links)
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS (Q3483645) (← links)
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case (Q4031570) (← links)
- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS (Q5484742) (← links)
