Pages that link to "Item:Q3819954"
From MaRDI portal
The following pages link to An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations (Q3819954):
Displaying 14 items.
- An accelerated monotone iterative method for the quantum-corrected energy transport model (Q939488) (← links)
- From the Boltzmann equation to generalized kinetic models in applied sciences (Q1376762) (← links)
- Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors. (Q1405012) (← links)
- Discretization of the multiscale semiconductor Boltzmann equation by diffusive relaxation schemes (Q1570347) (← links)
- Zero Debye length asymptotic of the quantum hydrodynamic model for semiconductors (Q1781838) (← links)
- On a one-dimensional steady-state hydrodynamic model for semiconductors (Q1813479) (← links)
- Stability of steady-state for 3-D hydrodynamic model of unipolar semiconductor with ohmic contact boundary in hollow ball (Q2223593) (← links)
- Numerical methods for high-dimensional probability density function equations (Q2374964) (← links)
- Almost Newton method for large flux steady-state of 1D Poisson--Nernst--Planck equations (Q2488283) (← links)
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence (Q4012382) (← links)
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case (Q4031570) (← links)
- A review of hydrodynamical models for semiconductors: Asymptotic behavior (Q4537484) (← links)
- Numerical methods for kinetic equations (Q4683916) (← links)
- Subsonic steady-states for bipolar hydrodynamic model for semiconductors (Q6181286) (← links)
