Pages that link to "Item:Q3823108"
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The following pages link to Simulation of the Transient Behavior of a One-Dimensional Semiconductor Device II (Q3823108):
Displayed 7 items.
- Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models (Q625942) (← links)
- Adaptive multiresolution semi-Lagrangian discontinuous Galerkin methods for the Vlasov equations (Q680117) (← links)
- Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells (Q2412210) (← links)
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence (Q4012382) (← links)
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case (Q4031570) (← links)
- Error Estimates for a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: The Zero Diffusion Case (Q4305983) (← links)
- A Parabolic System Model for the Formation of Porous Silicon: Existence, Uniqueness, and Stability (Q5254927) (← links)