Pages that link to "Item:Q4798832"
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The following pages link to NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS (Q4798832):
Displaying 13 items.
- Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (Q461266) (← links)
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors (Q852566) (← links)
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle (Q1604436) (← links)
- Temperature fields in machining processes and heat transfer models (Q1609381) (← links)
- Nonlinear nonviscous hydrodynamical models for charge transport in the framework of extended thermodynamic methods (Q1609414) (← links)
- A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices (Q1682541) (← links)
- Global existence for the system of the macroscopic balance equations of charge transport in semiconductors (Q1771381) (← links)
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
- New high-resolution central schemes for nonlinear conservation laws and convection-diffusion equations (Q1979136) (← links)
- Analysis of electrical and thermal responses of \(n\)-doped silicon to an impinging electron beam and joule heating (Q2270912) (← links)
- Selected Topics in Approximate Solutions of Nonlinear Conservation Laws. High-Resolution Central Schemes (Q2908809) (← links)
- A fourth-order central Runge-Kutta scheme for hyperbolic conservation laws (Q3055986) (← links)
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle (Q4672394) (← links)
