Pages that link to "Item:Q543757"
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The following pages link to Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model (Q543757):
Displaying 14 items.
- Adjoint DSMC for nonlinear Boltzmann equation constrained optimization (Q2129283) (← links)
- Unique Determination of Absorption Coefficients in a Semilinear Transport Equation (Q3383044) (← links)
- On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells (Q3455383) (← links)
- A New Numerical Approach to Inverse Transport Equation with Error Analysis (Q4560171) (← links)
- Online learning in optical tomography: a stochastic approach (Q4571014) (← links)
- Stability of stationary inverse transport equation in diffusion scaling (Q4607824) (← links)
- Stability of Inverse Transport Equation in Diffusion Scaling and Fokker--Planck Limit (Q4686836) (← links)
- Reconstruction of the Collision Kernel in the Nonlinear Boltzmann Equation (Q4964798) (← links)
- Reconstructing the Thermal Phonon Transmission Coefficient at Solid Interfaces in the Phonon Transport Equation (Q5024358) (← links)
- Unique Reconstruction of the Heat-Reflection Indices at Solid Interfaces (Q5044987) (← links)
- On diffusive scaling in acousto-optic imaging (Q5117401) (← links)
- Applications of kinetic tools to inverse transport problems (Q5220310) (← links)
- The Quasi-Neutral Limit in Optimal Semiconductor Design (Q5348482) (← links)
- Suppressing instability in a Vlasov-Poisson system by an external electric field through constrained optimization (Q6187634) (← links)
