The following pages link to (Q5690874):
Displaying 24 items.
- Residual distribution finite element method for convection-dominated problems (Q503958) (← links)
- Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models (Q625942) (← links)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
- Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results (Q881483) (← links)
- High order residual distribution conservative finite difference WENO schemes for convection-diffusion steady state problems on non-smooth meshes (Q886085) (← links)
- Asymptotic behavior of the solution to a nonisentropic hydrodynamic model of semiconductors (Q1265078) (← links)
- Weighted essentially non-oscillatory schemes on triangular meshes (Q1284552) (← links)
- The asymptotic behavior of globally smooth solutions of the multidimensional isentropic hydrodynamic model for semiconductors. (Q1399885) (← links)
- Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme. (Q1428666) (← links)
- Stability of steady state solutions for an isentropic hydrodynamic model of semiconductors of two species (Q1582635) (← links)
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle (Q1604436) (← links)
- A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices (Q1682541) (← links)
- A relaxation scheme for the hydrodynamic equations for semiconductors (Q1861999) (← links)
- The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry (Q1863472) (← links)
- Semiconductor device simulation using a viscous hydrodynamic model. (Q1871019) (← links)
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
- Analysis of numerical schemes for semiconductor energy-transport models (Q2041052) (← links)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
- Analysis of the local discontinuous Galerkin method for the drift-diffusion model of semiconductor devices (Q2629540) (← links)
- Charge Transport in an Incompressible Fluid: New Devices in Computational Electronics (Q2908824) (← links)
- Asymptotic behaviour of global smooth solutionsto the multidimensional hydrodynamic model for semiconductors (Q4539454) (← links)
- Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode (Q4716055) (← links)
- Computational macroscopic approximations to the one-dimensional relaxation-time kinetic system for semiconductors (Q5940295) (← links)
- Optimal \(L^2\) error estimates of stabilizer-free weak Galerkin finite element method for the drift-diffusion problem (Q6581953) (← links)
