On Maxwellian equilibria of insulated semiconductors (Q1584704): Difference between revisions
From MaRDI portal
Removed claims |
Set profile property. |
||
| (One intermediate revision by one other user not shown) | |||
| Property / author | |||
| Property / author: Luis A. Caffarelli / rank | |||
Normal rank | |||
| Property / author | |||
| Property / author: Peter Alexander Markowich / rank | |||
Normal rank | |||
| Property / MaRDI profile type | |||
| Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank | |||
Latest revision as of 04:00, 5 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | On Maxwellian equilibria of insulated semiconductors |
scientific article |
Statements
On Maxwellian equilibria of insulated semiconductors (English)
0 references
17 January 2001
0 references
Summary: A semilinear elliptic integrodifferential equation subject to homogeneous Neumann boundary conditions for the equilibrium potential in an insulated semiconductor device is considered. A variational formulation gives existence and uniqueness. The limit as the scaled Debye length tends to zero is analyzed. Two different cases occur. If the number of free electrons and holes is sufficiently high, local charge neutrality prevails throughout the device. Otherwise, depletion regions occur, and the limiting potential is the solution of a free boundary problem.
0 references
semilinear elliptic integrodifferential equation
0 references
homogeneous Neumann boundary conditions
0 references
equilibrium
0 references
semiconductor
0 references
existence
0 references
uniqueness
0 references
charge neutrality
0 references
