ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES (Q4798966): Difference between revisions

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+On a hierarchy of macroscopic models for semiconductors
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+An energy-transport model for semiconductors derived from the Boltzmann equation.
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+Global solutions to the isothermal Euler-Poisson plasma model
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+On a one-dimensional steady-state hydrodynamic model for semiconductors
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+A steady state potential flow model for semiconductors
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+The Child‐Langmuir asymptotics for semiconductors including phonon interactions
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+Macroscopic models for semiconductor heterostructures
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+Kinetic boundary layers and fluid-kinetic coupling in semiconductors
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+Convergence of the fractional step Lax-Friedrichs scheme and Godunov scheme for the isentropic system of gas dynamics
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+Convergence of the viscosity method for isentropic gas dynamics
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+Convergence of approximate solutions to conservation laws
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+Global weak solutions to initial-boundary-value problems for the one- dimensional quasilinear wave equation with large data
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+The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
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+A hierarchy of hydrodynamic models for plasmas zero-relaxation-time limits
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+Kinetic formulation of the isentropic gas dynamics and \(p\)-systems
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+The one-dimensional Darcy's law as the limit of a compressible Euler flow
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+Weak solutions to a hydrodynamic model for semiconductors: the Cauchy problem
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+Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
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+The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
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+Mixed problems for nonlinear conservation laws
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+Global solutions to the isothermal Euler-Poisson system with arbitrarily large data
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+Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices
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