Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186): Difference between revisions

@@ Property / MaRDI profile type @@
+MaRDI publication profile
@@ Property / MaRDI profile type: MaRDI publication profile / rank @@
+Normal rank
@@ Property / full work available at URL @@
+https://doi.org/10.1016/j.cma.2005.05.007
+Normal rank
@@ Property / OpenAlex ID @@
+W2077811612
@@ Property / OpenAlex ID: W2077811612 / rank @@
+Normal rank
@@ Property / cites work @@
+Quantum-corrected drift-diffusion models for transport in semiconductor devices
+Normal rank
@@ Property / cites work @@
+Q4222297
@@ Property / cites work: Q4222297 / rank @@
+Normal rank
@@ Property / cites work @@
+Mixed finite volume methods for semiconductor device simulation
+Normal rank
@@ Property / cites work @@
+Q4871736
@@ Property / cites work: Q4871736 / rank @@
+Normal rank
@@ Property / cites work @@
+Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
+Normal rank
@@ Property / cites work @@
+Numerical simulation of semiconductor devices
@@ Property / cites work: Numerical simulation of semiconductor devices / rank @@
+Normal rank
@@ Property / cites work @@
+Q3126802
@@ Property / cites work: Q3126802 / rank @@
+Normal rank
@@ Property / cites work @@
+Q5342712
@@ Property / cites work: Q5342712 / rank @@
+Normal rank