Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119): Difference between revisions

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Property / DOI: 10.1016/j.jcp.2010.02.002 / rank
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Property / author: Guo-Wei Wei / rank
 
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Latest revision as of 10:50, 10 December 2024

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Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
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    Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (English)
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    8 June 2010
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    mathematical modeling
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    nano-electronic device
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    MOSFET
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    quantum effects
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    Poisson-Schrödinger equations
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    interface model
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    random dopant
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