On Maxwellian equilibria of insulated semiconductors (Q1584704): Difference between revisions
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Latest revision as of 04:00, 5 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | On Maxwellian equilibria of insulated semiconductors |
scientific article |
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On Maxwellian equilibria of insulated semiconductors (English)
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17 January 2001
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Summary: A semilinear elliptic integrodifferential equation subject to homogeneous Neumann boundary conditions for the equilibrium potential in an insulated semiconductor device is considered. A variational formulation gives existence and uniqueness. The limit as the scaled Debye length tends to zero is analyzed. Two different cases occur. If the number of free electrons and holes is sufficiently high, local charge neutrality prevails throughout the device. Otherwise, depletion regions occur, and the limiting potential is the solution of a free boundary problem.
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semilinear elliptic integrodifferential equation
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homogeneous Neumann boundary conditions
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equilibrium
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semiconductor
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existence
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uniqueness
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charge neutrality
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