Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186): Difference between revisions

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Property / DOI: 10.1016/j.cma.2005.05.007 / rank
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Property / cites work: Quantum-corrected drift-diffusion models for transport in semiconductor devices / rank
 
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Property / cites work: Q4222297 / rank
 
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Property / cites work: Mixed finite volume methods for semiconductor device simulation / rank
 
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Property / cites work: Q4871736 / rank
 
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Property / cites work: Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models / rank
 
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Property / cites work: Numerical simulation of semiconductor devices / rank
 
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Property / cites work: Q3126802 / rank
 
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Property / cites work: Q5342712 / rank
 
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Property / DOI: 10.1016/J.CMA.2005.05.007 / rank
 
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Latest revision as of 08:00, 18 December 2024

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Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
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    Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (English)
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    20 September 2007
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    quantum drift-diffusion models
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    functional iterations
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    finite element method
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    nanoscale semiconductor devices
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