Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186): Difference between revisions

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-.1016/j.cma.2005.05.007
@@ Property / DOI: 10.1016/j.cma.2005.05.007 / rank @@
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+Quantum-corrected drift-diffusion models for transport in semiconductor devices
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+Q4222297
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+Mixed finite volume methods for semiconductor device simulation
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+Q4871736
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+Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
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+Numerical simulation of semiconductor devices
@@ Property / cites work: Numerical simulation of semiconductor devices / rank @@
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+Q3126802
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+.1016/J.CMA.2005.05.007
@@ Property / DOI: 10.1016/J.CMA.2005.05.007 / rank @@
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