Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119): Difference between revisions
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Latest revision as of 10:50, 10 December 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices |
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Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (English)
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8 June 2010
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mathematical modeling
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nano-electronic device
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MOSFET
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quantum effects
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Poisson-Schrödinger equations
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interface model
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random dopant
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