Continuation methods in semiconductor device simulation (Q1119373): Difference between revisions
From MaRDI portal
Changed an Item |
Set profile property. |
||
Property / MaRDI profile type | |||
Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank |
Revision as of 03:16, 5 March 2024
scientific article
Language | Label | Description | Also known as |
---|---|---|---|
English | Continuation methods in semiconductor device simulation |
scientific article |
Statements
Continuation methods in semiconductor device simulation (English)
0 references
1989
0 references
Predictor-corrector continuation methods for characterizing the voltage- current behavior of semiconductor devices are presented. The basic equations are discretized taking into account a nonrectangular spatial domain. A coarse grid is first constructed. This coarse grid is then refined, using a triangule subdivision, based on gradients in the doping profile. The equations are discretized using a generalization of the \textit{Scharfetter} and \textit{Gummel} upwinding scheme [IEEE Trans. Electr. Dev. ED-6, 64-77 (1969)]. Numerical results are included concerning CMOS structures but the methods are applicable and to other semiconductor devices.
0 references
Predictor-corrector continuation methods
0 references
semiconductor devices
0 references