The Monte Carlo method for semi-classical charge transport in semiconductor devices (Q5938367): Difference between revisions
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Revision as of 17:31, 3 June 2024
scientific article; zbMATH DE number 1621873
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English | The Monte Carlo method for semi-classical charge transport in semiconductor devices |
scientific article; zbMATH DE number 1621873 |
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The Monte Carlo method for semi-classical charge transport in semiconductor devices (English)
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18 July 2001
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A brief review of the semi-classical Monte Carlo method for semiconductor device simulation is given, covering the standard Monte Carlo algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model including band structure and scattering mechanisms. The link between physically-based Monte Carlo methods and the numerical method of Monte Carlo integration is considered. The integral representations and the conjugate equations are presented for the transient and the steady-state Boltzmann equation. From these equations the standard algorithms as well as a variety of new algorithms can be derived in a formal way.
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Monte Carlo method
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Boltzmann equation
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Semiconductor devices
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