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scientific article; zbMATH DE number 176375
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scientific article; zbMATH DE number 176375 |
Statements
18 May 1993
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Boltzmann transport equation
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Poisson equation
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Monte Carlo device simulation
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transistor
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MOSFET
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program DAMOCLES
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electronic transport
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bipolar homojunction
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program implementation
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numerical algorithms
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0.84010124
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0.8387137
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0.8365636
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0.8315269
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0.8310058
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0.82667553
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[For the entire collection see Zbl 0753.00014.] The authors created the program DAMOCLES to investigate key questions relating to a device technology where understanding and insight into the device physics are crucial. To date, DAMOCLES has been used to simulate electronic transport in SI, GaAs, InP, \(\text{Ga}_{0.47}\text{In}_{0.53}\text{As}\) and InAs MOSFETs and bipolar homojunction and GaAs MOSFETs. The program is based on a mathematical model discussed in this paper from three prespectives: the physical basis of the model, issues related to numerics and program implementation. The interest is centred upon the translation from physical background into numerical algorithms and the implementation on computers.
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