scientific article; zbMATH DE number 176375

MaRDI QIDQ4035520zbMATH OpenFDO

Authors Steven E. Laux, Massimo V. Fischetti

Publication date 18 May 1993

zbMATH Keywords

bipolar homojunctionBoltzmann transport equationelectronic transportMonte Carlo device simulationMOSFETnumerical algorithmsPoisson equationprogram DAMOCLESprogram implementationtransistor

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Applications to the sciences (65Z05) Transport processes in time-dependent statistical mechanics (82C70)

Review text

[For the entire collection see Zbl 0753.00014.] The authors created the program DAMOCLES to investigate key questions relating to a device technology where understanding and insight into the device physics are crucial. To date, DAMOCLES has been used to simulate electronic transport in SI, GaAs, InP, \(\text{Ga}_{0.47}\text{In}_{0.53}\text{As}\) and InAs MOSFETs and bipolar homojunction and GaAs MOSFETs. The program is based on a mathematical model discussed in this paper from three prespectives: the physical basis of the model, issues related to numerics and program implementation. The interest is centred upon the translation from physical background into numerical algorithms and the implementation on computers.

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Cited in

(4)

• The implementation of fluid phase Monte Carlo on the DAP
• Channeling energy loss in silicon by using numerical and experimental methods
• Numerical study of the systematic error in Monte Carlo schemes for semiconductors
• The Monte Carlo method for semi-classical charge transport in semiconductor devices

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