The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure (Q1802638): Difference between revisions
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Latest revision as of 04:44, 5 March 2024
scientific article
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| English | The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure |
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The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure (English)
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6 September 1993
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By using boundary-layer functions of a special type, the authors construct an asymptotic expansion for the solution of the singularly perturbed Poisson equation describing electrostatic potential in a three- dimensional parallelepiped in the framework of the drift-diffusion model.
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boundary-layer functions
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singularly perturbed Poisson equation
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parallelepiped
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drift-diffusion model
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