Continuation methods in semiconductor device simulation (Q1119373): Difference between revisions
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Revision as of 21:31, 19 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Continuation methods in semiconductor device simulation |
scientific article |
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Continuation methods in semiconductor device simulation (English)
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1989
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Predictor-corrector continuation methods for characterizing the voltage- current behavior of semiconductor devices are presented. The basic equations are discretized taking into account a nonrectangular spatial domain. A coarse grid is first constructed. This coarse grid is then refined, using a triangule subdivision, based on gradients in the doping profile. The equations are discretized using a generalization of the \textit{Scharfetter} and \textit{Gummel} upwinding scheme [IEEE Trans. Electr. Dev. ED-6, 64-77 (1969)]. Numerical results are included concerning CMOS structures but the methods are applicable and to other semiconductor devices.
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Predictor-corrector continuation methods
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semiconductor devices
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