Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186): Difference between revisions
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| Property / cites work: Quantum-corrected drift-diffusion models for transport in semiconductor devices / rank | |||
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| Property / cites work: Q4222297 / rank | |||
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| Property / cites work: Mixed finite volume methods for semiconductor device simulation / rank | |||
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| Property / cites work: Q4871736 / rank | |||
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| Property / cites work: Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models / rank | |||
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| Property / cites work: Numerical simulation of semiconductor devices / rank | |||
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| Property / cites work: Q3126802 / rank | |||
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Latest revision as of 08:59, 27 June 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models |
scientific article |
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Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (English)
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20 September 2007
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quantum drift-diffusion models
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functional iterations
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finite element method
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nanoscale semiconductor devices
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