Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709)

The article is concerned with the problem of proving the well-posedness of equations representing a regularized version of the hydrodynamical model for semiconductors based on the maximum entropy principle, applied to describe a metal-semiconductor-fields-effect-transistor (MESFET). The regularization is obtained in the steady case by expressing the electron velocity and the energy flux as functions of the electron density and energy and of the electrostatic potential along with their gradients. The resulting stationary energy-transport model is then transformed into a system of evolution equations in order to use a false transient approach to obtain the stationary solution as the asymptotic limit as time tends to infinity. A local in time existence result is proved by fixed point arguments in spaces of Hölder continuous functions.