A quantum corrected energy-transport model for nanoscale semiconductor devices

DOI10.1016/j.jcp.2004.10.006zbMath1143.82324OpenAlexW2054816836MaRDI QIDQ1777049

Ren-Chuen Chen, Jinn-Liang Liu

Publication date: 12 May 2005

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2004.10.006

Mathematics Subject Classification ID

Related Items (8)

A quantum corrected Poisson-Nernst-Planck model for biological ion channels ⋮ Energy transport in semiconductor devices ⋮ An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes ⋮ A posteriori error control in numerical simulations of semiconductor nanodevices ⋮ Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT ⋮ An accelerated monotone iterative method for the quantum-corrected energy transport model ⋮ A quantum energy transport model for semiconductor device simulation ⋮ Nonstationary monotone iterative methods for nonlinear partial differential equations

Cites Work

• A finite element formulation for the hydrodynamic semiconductor device equations
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
• Monotone iterative methods for the adaptive finite element solution of semiconductor equations
• Correspondence between quantum and classical motion: comparing Bohmian mechanics with a smoothed effective potential approach
• Object-oriented programming of adaptive finite element and finite volume methods
• The Quantum Hydrodynamic Model for Semiconductor Devices
• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
• On Weak Residual Error Estimation
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

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