Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models

DOI10.1016/J.CMA.2005.05.007zbMath1214.82123OpenAlexW2077811612MaRDI QIDQ2384186

Riccardo Sacco, Giuseppe Cassano, Claudio Giulianetti, Carlo de Falco

Publication date: 20 September 2007

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cma.2005.05.007

zbMATH Keywords

finite element methodfunctional iterationsnanoscale semiconductor devicesquantum drift-diffusion models

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Related Items (3)

Quantum Semiconductor Models ⋮ Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells ⋮ Quantum-corrected drift-diffusion models: Solution fixed point map and finite element approximation

Cites Work

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• Numerical simulation of semiconductor devices
• Quantum-corrected drift-diffusion models for transport in semiconductor devices
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
• Mixed finite volume methods for semiconductor device simulation

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