Approximate solutions to the quantum drift-diffusion model of semiconductors

DOI10.1063/1.2435985zbMath1121.82045OpenAlexW1999482637MaRDI QIDQ3442212

Vittorio Romano, Rita Tracinà, Mariano Torrisi

Publication date: 16 May 2007

Published in: Journal of Mathematical Physics (Search for Journal in Brave)

Full work available at URL: https://semanticscholar.org/paper/48ac2ef86fe51ca27f28a9d1b68e747411b9d34f

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Related Items (2)

Quantum Semiconductor Models ⋮ Group classification of an energy transport model for semiconductors with crystal heating

Cites Work

• On the stationary quantum drift-diffusion model
• Equivalence transformations and symmetries for a heat conduction model
• Mathematical problems in semiconductor physics. Lectures given at the C. I. M. E. summer school, Cetraro, Italy, July 15--22, 1998. With the collaboration of G. Mascali and V. Romano
• Quantum-corrected drift-diffusion models for transport in semiconductor devices
• Quantum energy-transport and drift-diffusion models
• Lagrangian variational principle in stochastic mechanics: Gauge structure and stability
• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors
• Uniform Convergence of an Exponentially Fitted Scheme for the Quantum Drift Diffusion Model
• Nano-scale MOSFET device modelling with quantum mechanical effects
• Second-order differential invariants of a family of diffusion equations
• Current-voltage characteristics from an asymptotic analysis of the MOSFET equations

This page was built for publication: Approximate solutions to the quantum drift-diffusion model of semiconductors