Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors
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Publication:3506772
DOI10.1090/S0033-569X-08-01081-3zbMath1156.78005MaRDI QIDQ3506772
Publication date: 17 June 2008
Published in: Quarterly of Applied Mathematics (Search for Journal in Brave)
Full work available at URL: http://www.ams.org/distribution/qam/2008-66-02/S0033-569X-08-01081-3/home.html
35Q35: PDEs in connection with fluid mechanics
82D37: Statistical mechanics of semiconductors
78A35: Motion of charged particles
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Cites Work
- Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
- Moment closure hierarchies for kinetic theories.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- On a hierarchy of macroscopic models for semiconductors
- Hydrodynamical modeling of charge carrier transport in semiconductors
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