ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
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Publication:4798797
DOI10.1142/S0218202500000215zbMath1012.82026OpenAlexW2051319897MaRDI QIDQ4798797
Publication date: 16 March 2003
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0218202500000215
Second-order nonlinear hyperbolic equations (35L70) Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)
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Cites Work
- The one-dimensional Darcy's law as the limit of a compressible Euler flow
- The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
