A Model for the Transient Behaviour of Long-Channel MOSFETs

DOI10.1137/S0036139992225759MaRDI QIDQ4287959zbMATH OpenFDO

Authors Christian Schmeiser

Publication date 18 July 1994

Published in SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/S0036139992225759

zbMATH Keywords

degenerate diffusion equationMOSFETSscalingsemiconductor

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) Degenerate parabolic equations (35K65) Motion of charged particles (78A35)

Recommendations

• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• scientific article; zbMATH DE number 4171542
• A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices
• Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
• Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors

Cited in

(4)

• Stochastic modeling and simulation of ion transport through channels
• Modelling CoolMOSC3 transistor characteristics in SPICE
• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• A dc I–V model for short‐channel polygonal enclosed‐layout transistors

This page was built for publication: A Model for the Transient Behaviour of Long-Channel MOSFETs

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4287959)