An efficient algorithm for optimizing the electrical performance of HBTs

DOI10.1002/JNM.504MaRDI QIDQ4418199zbMATH OpenOpenAlexFDO

Authors Hyungkeun Ahn, M. El Nokali, Deuk-Young Han

Publication date 7 August 2003

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.504

zbMATH Keywords

graded and setback layer HBT (heterojunction bipolar transistor)inverse engineeringoptimization of unity current gain frequency

Mathematics Subject Classification ID

Optimization problems in optics and electromagnetic theory (78M50) Statistical mechanics of semiconductors (82D37)

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Cited in

(4)

• On the design of base-collector junction of InGaAs/InP DHBT
• Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
• DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors
• Thermal analysis of multi-finger GaInP collector-up heterojunction bipolar transistors with miniature heat-dissipation packaging structures

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