Implicit-explicit multistep finite element methods for the semiconductor device problem.

MaRDI QIDQ1873642zbMATH OpenFDO

Authors Wei Chen

Publication date 2003

Published in Journal of Systems Science and Complexity (Search for Journal in Brave)

zbMATH Keywords

error estimatesfinite element methodsimplicit-explicit multistep methodsmultistep methodsPoisson equationsemiconductor devicestrong stability

Mathematics Subject Classification ID

Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) PDEs in connection with optics and electromagnetic theory (35Q60) Euler-Maclaurin formula in numerical analysis (65B15) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37)

Review text

Optimal \(L^2\)-norm error estimates are derived for a numerical method to compute the transient behaviour of a semiconductor device. The Poisson equation for the electric potential is discretized by a finite element method (FEM), and electron and hole density equations are treated by implicit-explicit multistep FEMs.

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(7)

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• Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device
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