Comparison between \(i_{\operatorname{g}}\) integration and \(v_{\operatorname{gs}}\) derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors (Q1998482)
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scientific article; zbMATH DE number 7318304
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| English | Comparison between \(i_{\operatorname{g}}\) integration and \(v_{\operatorname{gs}}\) derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors |
scientific article; zbMATH DE number 7318304 |
Statements
Comparison between \(i_{\operatorname{g}}\) integration and \(v_{\operatorname{gs}}\) derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors (English)
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6 March 2021
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silicon carbide MOSFETs
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normal turn on
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short circuit
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hard switch fault
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fault under load
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gate charge
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