Comparison between i_g integration and v_gs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

DOI10.1016/J.MATCOM.2020.05.011OpenAlexW2959376140MaRDI QIDQ1998482FDOQ1998482

Authors: Yazan Barazi, Nicolas Rouger, Frédéric Richardeau 

Publication date: 6 March 2021

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2020.05.011

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• scientific article; zbMATH DE number 527269

zbMATH Keywords

short circuitfault under loadgate chargehard switch faultnormal turn onsilicon carbide MOSFETs

Mathematics Subject Classification ID

Optics, electromagnetic theory (78-XX) Information and communication theory, circuits (94-XX)

Cites Work

• Sic power MOSFET in short-circuit operation: electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

Cited In (1)

• Special issue ELECTRIMACS 2019 energy modelling and computational simulation for control and diagnosis in renewable energy systems, energy storage, innovative devices and materials

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