Comparison between i_g integration and v_gs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

DOI10.1016/J.MATCOM.2020.05.011MaRDI QIDQ1998482zbMATH OpenOpenAlexFDO

Authors Yazan Barazi, Nicolas Rouger, Frédéric Richardeau

Publication date 6 March 2021

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2020.05.011

zbMATH Keywords

short circuitfault under loadgate chargehard switch faultnormal turn onsilicon carbide MOSFETs

Mathematics Subject Classification ID

Optics, electromagnetic theory (78-XX) Information and communication theory, circuits (94-XX)

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Cites work

• Sic power MOSFET in short-circuit operation: electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

Cited in

(1)

• Special issue ELECTRIMACS 2019 energy modelling and computational simulation for control and diagnosis in renewable energy systems, energy storage, innovative devices and materials

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