A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition (Q2361798)
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scientific article; zbMATH DE number 6739590
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| English | A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition |
scientific article; zbMATH DE number 6739590 |
Statements
A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition (English)
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5 July 2017
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chemical vapor deposition
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multi-scale
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fully integrated
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silicon
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0.8699626
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0.8655909
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0.86396956
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0.8615345
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0.8557757
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0.85172105
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0.84071714
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0.83703303
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