Well-posedness for the drift-diffusion system in \(L^p\) arising from the semiconductor device simulation (Q2481908)

The authors study the following coupled system of the elliptic-parabolic equation \[ \partial_t u=\nu\Delta_x u- \mu_1\nabla_x(u\nabla_x\psi)+ f,\quad t> 0,\;x\in\mathbb{R}^N, \] \[ \partial_t v=\nu\Delta_x v- \mu_2\nabla_x(v\nabla_x \psi)+ f,\quad t> 0,\;x\in\mathbb{R}^N, \] \[ -\Delta_x \psi= v- u+ g, \] \[ u(0,x)= u_0(x),\quad v(0,x)= v_0(x). \] Under suitable assumptions on the data the authors show well-posedness of the strong solutions in \(L^p\) spaces as well as global existence and their stability. To this end, among it others they use Hardy-Littlewood-Sobolev inequality.