The model of radiation-induced conductivity in silicon (Q2830689)
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scientific article; zbMATH DE number 6645485
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| English | The model of radiation-induced conductivity in silicon |
scientific article; zbMATH DE number 6645485 |
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28 October 2016
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electron leaking
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crystal mesh
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quantum kinetic equations
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densities of states
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group velocities
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0.8714218
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0.8237575
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0.8228736
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0.8204044
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0.81944084
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The model of radiation-induced conductivity in silicon (English)
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The zone theory of crystal is taken as a basis of an approximation model describing the continuous electron retardation in a process of electron leaking on defects of a crystal mesh. The quantum kinetic equations for the distribution functions of the conductivity electrons in the phase space of coordinates and quasi-impulses are applied. Effective masses, densities of states, and group velocities of particles are found. The effectiveness of the model is tested by comparison with experimental data presenting a correspondence between mean electron velocities, electron field intensity and the electron energy velocity transfer to the mesh.
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