Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device (Q2864895)
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scientific article; zbMATH DE number 6233531
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| English | Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device |
scientific article; zbMATH DE number 6233531 |
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26 November 2013
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sige \(n\)MOSFET
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finite difference mesh
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drift diffusion model (DDM)
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2D simulation
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Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device (English)
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The two-dimensional drift-diffusion model is used to calculate characteristics of the charge carrier in a strained MOSFET device. Numerical results are obtained with the use of a standard set of methods, i.e. the Gummel's method, the Gauss-Seidel's method and so on. From the point of view of the rounding errors evolution, the usage of the Gauss-Seidel method raises questions. As a whole, the paper is more like a technical report because well-known methods are used.
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