Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs (Q3183291)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs |
scientific article; zbMATH DE number 5617833
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs |
scientific article; zbMATH DE number 5617833 |
Statements
Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs (English)
0 references
19 October 2009
0 references
electric current
0 references
electric field effects
0 references
field-effect transistors
0 references
input/output analysis
0 references
simulation
0 references
0.7173231244087219
0 references
0.7164534330368042
0 references
0.7062292695045471
0 references
0.6928098797798157
0 references
