Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs

DOI10.1108/03321640910929263zbMATH Open1176.78014OpenAlexW2026506600MaRDI QIDQ3183291FDOQ3183291

Authors: Himanshu Batwani, Mayank Gaur, M. Jagadesh Kumar 

Publication date: 19 October 2009

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640910929263

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zbMATH Keywords

simulationelectric currentelectric field effectsfield-effect transistorsinput/output analysis

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Analytic circuit theory (94C05)

Cited In (2)

• A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
• Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices

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