Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs

DOI10.1108/03321640910929263MaRDI QIDQ3183291zbMATH OpenOpenAlexFDO

Authors Himanshu Batwani, Mayank Gaur, M. Jagadesh Kumar

Publication date 19 October 2009

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321640910929263

zbMATH Keywords

simulationelectric currentelectric field effectsfield-effect transistorsinput/output analysis

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Analytic circuit theory (94C05)

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(2)

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• Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices

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