A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

DOI10.1080/08927020802706995zbMATH Open1170.82427OpenAlexW2171404457WikidataQ58215654 ScholiaQ58215654MaRDI QIDQ3394239FDOQ3394239

Authors Jin He, Lining Zhang, Jian Zhang, Chenyue Ma, Feilong Liu, M. S. Chan 

Publication date 28 August 2009

Published in Molecular Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1080/08927020802706995

zbMATH Keywords

device physicsnon-charge-sheet approximationnon-classical MOS transistorsurface potential modelsurrounding-gate MOSFETs

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cited In (7)

• Performance evaluation of source heterojunction strained channel gate all around nanowire transistor
• A compact quantum surface potential model for a MOSFET device
• A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
• On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel
• Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential
• Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs
• 3D analytical modeling of potential, drain current, and threshold characteristics for long-channel square gate-all-around (SGAA) MOSFETs

Uses Software

• Sentaurus Device

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