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scientific article; zbMATH DE number 176377
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scientific article; zbMATH DE number 176377 |
Statements
18 May 1993
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deformation potential
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simulation of semiconductor phenomenon
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theory of semiconductors
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Monte Carlo simulations
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carrier transport in semiconductors
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electron-phonon interaction
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simulation experiments
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scattering rates
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0.7645514607429504
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0.732262134552002
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0.7163963913917542
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0.7093913555145264
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[For the entire collection see Zbl 0753.00014.] The simulation of carrier transport in semiconductors using the potential of the ions as a sole input is studied in the survey paper. The paper contains an overview of the theory of electron-phonon interaction (and its approximations) and the values of many parameters appearing in the theory. The parameters must be used in simulation experiments. The scattering rates are derived. It is shown that that pseudopotentials developed in theory are in a satisfactory agreement with Monte Carlo fits. Some problems of the discussed models are mentioned.
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