scientific article; zbMATH DE number 176377

MaRDI QIDQ4035524zbMATH OpenFDO

Authors Massimo V. Fischetti, J. M. Higman

Publication date 18 May 1993

zbMATH Keywords

carrier transport in semiconductorsdeformation potentialelectron-phonon interactionMonte Carlo simulationsscattering ratessimulation experimentssimulation of semiconductor phenomenontheory of semiconductors

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Monte Carlo methods (65C05) Applications to the sciences (65Z05) Motion of charged particles (78A35) Technical applications of optics and electromagnetic theory (78A55) Electromagnetic interaction; quantum electrodynamics (81V10)

Review text

[For the entire collection see Zbl 0753.00014.] The simulation of carrier transport in semiconductors using the potential of the ions as a sole input is studied in the survey paper. The paper contains an overview of the theory of electron-phonon interaction (and its approximations) and the values of many parameters appearing in the theory. The parameters must be used in simulation experiments. The scattering rates are derived. It is shown that that pseudopotentials developed in theory are in a satisfactory agreement with Monte Carlo fits. Some problems of the discussed models are mentioned.

Recommendations

• scientific article; zbMATH DE number 176376
• Hybrid particle-based approach for the simulation of semiconductor devices: The full-band cellular automaton/Monte Carlo method
• Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements
• A Monte Carlo Model of Piezoelectric Scattering in GaN
• THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

Cited in

(8)

• Numerical computation of charge carriers optical phonon scattering mobility in III-V semiconductor compounds
• scientific article; zbMATH DE number 176376 (Why is no real title available?)
• ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS
• Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule
• Electron-electron scattering rate in CdTe/CdMnTe single quantum well
• Relaxation processes and mobility of electrons in a semiconductor quantum well with the modified Pöschl-Teller confining potential
• Method of calculating the electron-phonon scattering of surface electronic states on the (110) surface of noble metals
• Estimation of the deformation-potential constant for \(p\)-type isotropic polycrystalline silicon through the deformation potential of a \(p\)-type silicon single crystal

This page was built for publication:

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4035524)