scientific article; zbMATH DE number 176377

MaRDI QIDQ4035524zbMATH OpenFDO

Authors Massimo V. Fischetti, J. M. Higman

Publication date 18 May 1993

zbMATH Keywords

carrier transport in semiconductorsdeformation potentialelectron-phonon interactionMonte Carlo simulationsscattering ratessimulation experimentssimulation of semiconductor phenomenontheory of semiconductors

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Monte Carlo methods (65C05) Applications to the sciences (65Z05) Motion of charged particles (78A35) Technical applications of optics and electromagnetic theory (78A55) Electromagnetic interaction; quantum electrodynamics (81V10)

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(8)

• Numerical computation of charge carriers optical phonon scattering mobility in III-V semiconductor compounds
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• ELASTIC AND DRIFT–DIFFUSION LIMITS OF ELECTRON–PHONON INTERACTION IN SEMICONDUCTORS
• Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule
• Electron-electron scattering rate in CdTe/CdMnTe single quantum well
• Relaxation processes and mobility of electrons in a semiconductor quantum well with the modified Pöschl-Teller confining potential
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• Estimation of the deformation-potential constant for \(p\)-type isotropic polycrystalline silicon through the deformation potential of a \(p\)-type silicon single crystal

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